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START540
NPN Silicon RF Transistor
* LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V * HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V * GOOD RUGGEDNESS BVceo = 4.5V * TRANSITION FREQUENCY 45GHz * ULTRA MINIATURE SOT343 PACKAGE
SOT343 (SC70) ORDER CODE START540TR BRANDING 540
DESCRIPTION The START540 is a member of the START family that provide the market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the highest linearity with excellent Noise Figure for 4.5V breakdown voltage(BVceo). It reaches performance level only achieved with GaAs products before.
APPLICATIONS * LNA FOR GSM/DCS, DECT, PDC, PCS, PCN, CDMA, W-CDMA * GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = 101 Storage temperature Max. operating junction temperature Parameter Value 4.5 15 1.5 40 4 180 -65 to 150 150 Unit V V V mA mA mW
oC oC
ABSOLUTE MAXIMUM RATINGS
Rthjs Thermal Resistance Junction soldering point 270
oC/W
July, 3 2002
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ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified)
Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms
(1)
Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum stable gain 1dB compression point Ouput third order intercept point
Test Conditions Vcb = 5V, Ie = 0A Veb = 1.5V, Ic = 0A Ic = 20mA, Vce = 3V Ic = 5mA, Vce = 2V, f = 1.8GHz, Zs = Zsopt Ic = 5mA, Vce = 2V, f = 1.8GHz Ic = 20mA, Vce = 2V, f = 1.8GHz Ic = 20mA, Vce = 2V, f = 1.8GHz Ic = 20mA,Vce = 2V, f = 1.8GHz Ic = 20mA,Vce = 2V, f = 1.8GHz
Min.
Typ.
Max. 150 15
Unit nA A
100
160 0.9 16 19.5 22.7 13 24 dB dB dB dB dBm dBm
P-1dB OIP3
Note(1): Gms = | S 21 / S12 |
PINOUT
4
3
PIN CONNECTION
Top view
1 2
Pin No. 1 3 2,4
Description BASE COLLECTOR EMITTER
SOT343
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COMMON EMITTER S-PARAMETERS ( V CE = 2V, IC = 20mA )
f GHz 0.1 0.5 0.9 1 1.5 1.8 2 2.5 3 3.5 4 MAG 0.699 0.545 0.480 0.476 0.483 0.494 0.503 0.513 0.533 0.551 0.559 S11 ANG -21.6 -89.7 -130.0 -137.4 -166.9 179.6 172.2 157.6 147.8 139.6 133.8 MAG 42.32 27.82 18.42 16.86 11.63 9.63 8.49 6.46 5.34 4.54 3.87 S21 ANG 164.0 119.9 98.1 94.0 76.9 68.2 63.1 53.6 45.9 36.6 28.3 MAG 0.009 0.027 0.036 0.038 0.048 0.052 0.055 0.061 0.069 0.077 0.085 S12 ANG 88.9 58.1 48.1 47.2 41.6 38.8 36.7 31.7 26.7 21.2 13.7 MAG 0.942 0.642 0.431 0.397 0.272 0.220 0.193 0.148 0.142 0.153 0.154 S22 ANG -12.2 -50.6 -70.6 -74.7 -96.2 -110.7 -123.3 -154.4 -171.4 177.9 162.7
COMMON EMITTER S-PARAMETERS ( V CE = 2V, IC = 5mA )
f GHz 0.5 0.9 1 1.5 1.8 2 2.5 3 3.5 4 MAG 0.816 0.715 0.695 0.620 0.589 0.581 0.570 0.572 0.585 0.592 S11 ANG -50.5 -84.6 -92.5 -128.0 -145.6 -156.1 -167.6 167.6 155.3 146.1 MAG 14.56 11.92 11.32 8.64 7.39 6.66 5.87 4.37 3.74 3.20 S21 ANG 140.8 118.2 113.2 91.5 80.9 74.5 8.0 51.7 40.4 30.6 MAG 0.038 0.058 0.061 0.075 0.080 0.080 0.082 0.085 0.090 0.094 S12 ANG 65.8 48.4 45.0 30.9 23.8 19.3 14.8 5.7 1.1 -5.0 MAG 0.879 0.720 0.685 0.515 0.425 0.374 0.316 0.225 0.208 0.184 S22 ANG -30.3 -49.0 -53.1 -71.9 -81.8 -88.4 -96.8 -166.8 -128.4 -141.2
COMMON EMITTER NOISE-PARAMETERS ( VCE = 2V, IC = 5mA )
f GHz 1.8 2 2.5 3 3.5 4 Fmin dB 0.91 0.96 1.01 1.14 1.3 1.4 MAG 0.39 0.48 0.48 0.46 0.39 0.32
opt
ANG 100.8 115.2 136.8 163 -160 -122.4
Rn 6.4 6.38 5.94 5.6 5.2 5
rn 0.128 0.127 0.118 0.112 0.104 0.1
|S21|2 dB 17.38 16.47 14.35 12.82 11.46 10.12
F50 dB 1.12 1.22 1.34 1.38 1.42 1.66
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SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) TRANSISTOR CHIP DATA
Symbol TMEAS IS ISE NR ISC IKF TR XTF RB RC CJE CJC CJS Value 27.0 1.00E-16 1.58E-11 1 1.55E-15 {0.217*((T(oC)+273.15)/ 300.15)^(-1.63)} 7E-10 9.84 10.8 3.77 421E-15 160E-15 112E-15 Symbol FC EG NF NE BR NC PTF ITF RBM RE VJE VJC VJS Value 0.66 1.12 1 3.27 9.52 1.495 32.0 0.498 2.94 0.42 1.03 0.6 0.4 Symbol XJBC XTI BF VAF VAR TF VTF MJE MJC MJS IKR XTB Value 0.53 3.76 320 70 2.3 3.0E-12 27.9 0.497 0.292 0.245 8.32E-3 -0.54
PACKAGE EQUIVALENT CIRCUIT
C2 C=66 fF
B
.
L4 L=0.6 nH
.
L3
B'
L=0.35 nH
Transistor Chip E'
L1
C'
L5 L=0.3 nH
.
L6 L=0.6 nH
.
C
L=0.1 nH
C1 C=436 fF L2
. .
E
C3 C=334 fF L=0.05 nH
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343 package are combined in one electrical connection. FOR MORE ACCURACY SIMULATION IN SATURATION REGION : Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version 2001 only). Table A Table A (Spice Parameters extracted in saturation region) RW
1.173
Vjj
0.8
ENP
2.085
VRP
{4.12*((TEMPER+273.15)/300.15)^(0.303)}
RP
1.00E-6
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TAPE & REEL DIMENSIONS
mm MIN. A C D N T Ao Bo Ko Po P 3.8 (cumulative 10 Po) 2.25 2.7 1.2 4.0 4.0 4.2 (cumulative 10 Po) 178.5 12.8 20.2 54.5 55 55.5 14.4 TYP. 179 13.0 MAX 179.5 13.5
DEVICE ORIENTATION
TOP VIEW END VIEW
540
540
540
540
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PACKAGE DIMENSIONS SOT343 (SC-70 4 leads)
1.30
1.15-1.35
2.00-2.20
1.15
0.55-0.65
1.90-2.10
1.15-1.35
0.80-1.00 0.45
0.10-0.20
0.25-0.35
0.00-0.10
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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